 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| SOT223 NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ISSUE 3 - OCTOBER 1995 FEATURES * High VCEO / Very Low Saturation Voltage * Gain of 400 at IC=200mA APPLICATIONS * Darlington replacement * Relay / solenoid driver PARTMARKING DETAIL FZT694B FZT694B C E C B SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg VALUE 120 120 5 2 1 2 -55 to +150 MAX. UNIT V V V 0.1 0.1 0.25 0.5 0.9 0.9 A A ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation Tamb=25C Operating and Storage Temperature Range PARAMETER Breakdown Voltages SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio Transition Frequency Input Capacitance Output Capacitance Switching Times ICBO IEBO VCE(sat) VBE(sat) VBE(on) hFE fT Cibo Cobo ton toff 500 400 150 130 200 9 80 2900 MHz pF pF ns ns MIN. 120 120 5 UNIT V V V A A W C ELECTRICAL CHARACTERISTICS (at Tamb = 25C) TYP. CONDITIONS. IC=100A IC=10mA* IE=100A VCB=100V VEB=4V IC=100mA, IB=0.5mA* IC=400mA, IB=5mA* IC=1A, IB=10mA* IC=1A, VCE=2V* IC=100mA, VCE=2V* IC=200mA, VCE=2V* IC=400mA, VCE=2V* IC=50mA, VCE=5V f=50MHz VEB=0.5V, f=1MHz VCB=10V, f=1MHz IC=100mA, IB!=10mA IB2=10mA, VCC=50V V V V V *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% Spice parameter data is available upon request for this device 3 - 225 FZT694B TYPICAL CHARACTERISTICS IC/IB=200 0.8 IC/IB=100 IC/IB=10 Tamb=25C 0.8 -55C +25C +100C +175C IC/IB=100 - (Volts) 0.6 - (Volts) V 0.6 0.4 0.4 V 0.2 0.2 0 0.01 0.1 1 10 0 0.01 0.1 1 10 I+ - Collector Current (Amps) I+ - Collector Current (Amps) VCE(sat) v IC VCE(sat) v IC 1.6 - Normalised Gain 1.4 1.2 1.0 0.8 0.6 +100C +25C -55C VCE=2V 1.5K 1.6 1.4 -55C +25C +100C +175C IC/IB=100 - Typical Gain - (Volts) V 1.2 1.0 0.8 0.6 0.4 0.2 1K 500 0.4 h 0.2 0 0 0.01 0.1 1 10 0 0.01 0.1 1 10 I+ - Collector Current (Amps) h I+ - Collector Current (Amps) hFE v IC VBE(sat) v IC 1.6 1.4 -55C +25C +100C +175C VCE=2V 10 - (Volts) 1.2 1.0 0.8 0.6 0.4 0.2 0 1 DC 1s 100ms 10ms 1ms 100us V 0.1 0 0.01 0.1 1 10 0.01 1 10 100 1000 I+ - Collector Current (Amps) VCE - Collector Emitter Voltage (V) VBE(on) v IC Safe Operating Area 3 - 226 |
Price & Availability of FZT694B
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |